2003、2006、2009年于武汉大学获工学学士、硕士、博士学位。2011年至2012年，香港科技大学博士后。先后承担《半导体物理与器件》、《模拟IC设计》、《电子线路》、《微电子数值技术》、《电子线路实验》等课程。

基于计算电子学方法，在纳电子器件及其电路应用领域展开工作，在微电子学与固体电子学、电子信息、集成电路工程、物理电子等专业招收学硕、专硕。

指导学生获得中国研究生创“芯”大赛国家一等奖（创芯之星竞演）、光谷赛道（企业命题）一等奖、大学生集成电路创新创业大赛国家一等奖、大学生物理实验竞赛（创新赛）国家一等奖、国家大学生创新创业训练计划优秀结题项目、武汉大学优秀学士学位论文等。

Selective journal articles in recent years:
[1] Y. Lv, J. Wang, G. Yang, W. Qin, L. Li*, and H. Wang*, "How Can Si/Ge Core/Shell Nanowires Outperform Their Pure Material Counterparts?," IEEE Transactions on Electron Devices, vol. 67, pp. 1327-1333, 2020.;  
[2] M. Qiu, S. Ye, W. Wang, J. He, S. Chang, H. Wang*,  Q. Huang, "The interfacial states effects on the spin-dependent tunneling of Mn3Al-based magnetic tunnel junction," Journal of Physics D: Applied Physics, vol. 54, p. 115002, 2021.
[3] H. Wang, S. Chang, J. He, Q. Huang, and F. Liu, "Dielectric Engineering With the Environment Material in 2-D Semiconductor Devices," IEEE Journal of the Electron Devices Society, vol. 6, pp. 325-331, 2018.
[4] H. Wang, S. Chang, J. He, Q. Huang and F. Liu, "The Dual Effects of Gate Dielectric Constant in Tunnel FETs," IEEE Journal of the Electron Devices Society, vol. 4, pp. 445-450, 2016.
[5] Y. Lv, Q. Huang, H. Wang*, S. Chang, and J. He, "A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel FET," IEEE Electron Device Letters, vol. 37, pp. 1354-1357, 2016.

Book chapter:
H. Wang, “Carbon Nanotube TFETs: Structure optimization with numerical simulations”, Tunneling Field Effect Transistor Technology, 2016 –Springer International Publishing. DOI:10.1007/978-3-319-31653-6_7

Link to Scholar
https://scholar.google.com/citations?&user=0eovXlAAAAAJ