Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications
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DOI码：10.1016/j.apsusc.2020.146843
发表刊物：Applied Surface Science
卷号：527
是否译文：否
发表时间：1905-07-12