武汉大学主页平台管理系统郭宇铮--中文主页-- Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric

Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric

点击次数： DOI码：10.1109/TED.2023.3319283 发表刊物：IEEE Transactions on Electron Devices 卷号：70 是否译文：否 发表时间：1905-07-15