Mechanism of Threshold Voltage Instability in SiC MOSFETs and Impacts on Dynamic Switching
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DOI码：10.1109/ISPSD57135.2023.10147608
发表刊物：Proceedings of the International Symposium on Power Semiconductor Devices and ICs
卷号：2023-May
是否译文：否
发表时间：1905-07-15