肖孟

+

其他联系方式

  • 邮编:

  • 通讯/办公地址:

  • 邮箱:

论文

当前位置: Chinese > 科学研究 > 论文

Family of third-order topological insulators from Su-Schrieffer-Heeger stacking

  • 发布时间:2025-05-13
  • 点击次数:
  • 发表刊物:Physical Review B
  • 摘要:We construct a family of chiral symmetry-protected third-order topological insulators by stacking
     Su-Schrieffer-Heeger (SSH) chains and provide a unified topological characterization by a series of
     Bott indices. Our approach is informed by the analytical solution of corner states for the model
     Hamiltonians written as a summation of the extended SSH model along three orthogonal directions.
     By utilizing the generalized Pauli matrices, an enumeration of the constructed model Hamiltonians
     generates ten distinct models, including the well-studied three-dimensional Benalcazar-Bernevig
    Hughes model. By performing a boundary projection analysis for the ten models, we find that
     certain surfaces and hinges of the systems can exhibit, respectively, nontrivial second-order and first
    order topology in the phase of the third-order topological insulators. Furthermore, we analyze the
     phase diagram for one of the predicted models and reveal a rich set of topological phases, including
     the third-order topological insulators, second-order weak topological insulators, and second-order
     nodal semimetals.
  • 卷号:111
  • 期号:3
  • 页面范围:035115
  • 是否译文:
  • 发表时间:2025-01-15

Copyright武汉大学2017 地址:湖北省武汉市武昌区八一路299号 邮编:430072
鄂ICP备05003330鄂公网安备42010602000219