Chang Sheng

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Paper Publications

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Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices

Date:2018-01-13 Hits:

Journal: IEEE Transactions on Electron Devices

Volume: 63

Issue: 11

Page Number: 4514-4520

Translation or Not: no

Date of Publication: 2016-06-08

Included Journals: SCI

Pre One:The Dual Effects of Gate Dielectric Constant in Tunnel FETs Next One:Prior Knowledge Input Neural Network Method for GFET Description

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