Defects and Passivation Mechanism of the Suboxide Layers at SiO/4H-SiC (0001) Interface: A First-Principles Calculation
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DOI码：10.1109/TED.2020.3039480
发表刊物：IEEE Transactions on Electron Devices
卷号：68
是否译文：否
发表时间：1905-07-13