[1].  周圣军 Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase refle....  APPLIED OPTICS.  53 (34).  2014. 

[2].  周圣军 Improved light output power of LEDs with embedded air voids structure and SiO2 current blocking l....  APPLIED SURFACE SCIENCE.  305.  2014. 

[3].  周圣军 Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-bas....  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.  214 (5).  2017. 

[4].  周圣军 GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts....  OPTICS AND LASER TECHNOLOGY.  92.  2017. 

[5].  周圣军 Effect of profile and size of isolation trench on the optical and electrical performance of GaN-b....  APPLIED SURFACE SCIENCE.  366.  2016. 

[6].  周圣军 Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped ....  APPLIED SURFACE SCIENCE.  355.  2015. 

[7].  周圣军 Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of....  OPTICS AND LASER TECHNOLOGY.  97.  2017. 

[8].  周圣军 Effect of ring-shaped SiO2current blocking layer thickness on the external quantum efficiency of ....  Optics and Laser Technology.  97.  2017. 

[9].  周圣军 Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire subst....  Japanese Journal of Applied Physics.  56 (11).  2017. 

[10].  《微纳制造技术》教学经验与感受浅谈.  教育教学论坛.  (1674-9324).  2016.