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张召富
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Research Focus
基于第一性原理计算、分子动力学、有限元和机器学习的宽禁带半导体材料与器件理性设计（围绕GaN, SiC, Diamond, Ga2O3等）
先进封装工艺（2.5D/3D封装、Chiplet封装）的多物理场多尺度仿真与集成
宽禁带半导体的缺陷、界面、器件、制备工艺、封装工艺的多尺度建模仿真，及其对器件性能影响
半导体器件制备与表征，半导体器件物理
