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学历：博士研究生毕业
毕业院校：剑桥大学
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- [201]. Electrical conduction of carbon nanotube forests through sub-nanometric films of alumina. Applied Physics Letters. 102. 1905.
- [202]. Equation of state and topological transitions in amorphous solids under hydrostatic compression. Journal of Applied Physics. 108. 1905.
- [203]. Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements. Applied Physics Letters. 104. 1905.
- [204]. Materials selection for oxide-based resistive random access memories. Applied Physics Letters. 105. 1905.
- [205]. The role of the sp2:sp3 substrate content in carbon supported nanotube growth. Carbon. 75. 1905.
- [206]. Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning. Applied Physics Letters. 101. 1905.
- [207]. Light induced instability mechanism in amorphous InGaZn oxide semiconductors. Applied Physics Letters. 104. 1905.
- [208]. Chemical trends and passivation of defects at Al2O 3:GaAs/InAs/InP/GaSb interfaces. Microelectronic Engineering. 109. 1905.
- [209]. Atomistic simulation of a NiZr model metallic glass under hydrostatic pressure. Applied Physics Letters. 94. 1905.
- [210]. First-principles calculations of the electronic structure and defects of Al2O3. Journal of Applied Physics. 114. 1905.
- [211]. Stability of graphene doping with MoO3and I2. Applied Physics Letters. 105. 1905.
- [212]. Origin of the high work function and high conductivity of MoO3. Applied Physics Letters. 105. 1905.
- [213]. Tunable Rashba effect in two-dimensional LaOBiS2 films: Ultrathin candidates for spin field effec.... Nano Letters. 13. 1905.
- [214]. Sulfur vacancies in monolayer MoS2 and its electrical contacts. Applied Physics Letters. 103. 1905.
- [215]. Analysis of metal insulator transitions in VO2 and V 2O3 for RRAMs. Microelectronic Engineering. 109. 1905.
- [216]. Calculation of metallic and insulating phases of V2O3 by hybrid density functionals. Journal of Chemical Physics. 140. 1905.
- [217]. Electronic and magnetic properties of Ti 2O 3, Cr 2O 3, and Fe 2O 3 calculated by the screened ex.... Journal of Physics Condensed Matter. 24. 1905.
- [218]. Nitrogen passivation at GaAs:Al2O3 interfaces. Applied Physics Letters. 102. 1905.
- [219]. Soft control of scanning probe microscope with high flexibility. Scanning. 29. 1905.
- [220]. Chemical trends of defects at HfO2:GaAs and Al2O 3:GaAs/InAs/InP/GaSb interfaces. Journal of Applied Physics. 113. 1905.