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学历：博士研究生毕业
毕业院校：剑桥大学
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- [101]. 3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides. ACS Applied Materials and Interfaces. 7. 1905.
- [102]. Defects and reliability of high K gate stacks on Si, Ge and III-Vs. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. 1905.
- [103]. Anisotropic Transport Property of Antimonene MOSFETs. ACS Applied Materials and Interfaces. 12. 1905.
- [104]. Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces. Applied Surface Science. 505. 1905.
- [105]. Thickness dependent friction on few-layer MoS2, WS2, and WSe2. Nanotechnology. 28. 1905.
- [106]. Controllable thermal oxidation and photoluminescence enhancement in quasi-1D van der waals ZrS3 f.... ACS Applied Electronic Materials. 2. 1905.
- [107]. Vacancy and Doping States in Monolayer and bulk Black Phosphorus. Scientific Reports. 5. 1905.
- [108]. Low temperature growth of carbon nanotubes on tetrahedral amorphous carbon using Fe-Cu catalyst. Carbon. 81. 1905.
- [109]. Comparison of oxygen vacancy defects in crystalline and amorphous Ta2O5. Microelectronic Engineering. 147. 1905.
- [110]. The Electrophilicity of Surface Carbon Species in the Redox Reactions of CuO-CeO2 Catalysts. Angewandte Chemie - International Edition. 60. 1905.
- [111]. Charge transfer doping of graphene without degrading carrier mobility. Journal of Applied Physics. 121. 1905.
- [112]. Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-pri.... Microelectronic Engineering. 216. 1905.
- [113]. Role of the third metal oxide in In-Ga-Zn-O4amorphous oxide semiconductors: Alternatives to galli.... Journal of Applied Physics. 128. 1905.
- [114]. Schottky barrier height at metal/ZnO interface: A first-principles study. Microelectronic Engineering. 216. 1905.
- [115]. Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping. Applied Physics Letters. 111. 1905.
- [116]. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates. ACS Applied Materials and Interfaces. 8. 1905.
- [117]. Photonic-plasmonic hybrid single-molecule nanosensor measures the effect of fluorescent labels on.... Science Advances. 3. 1905.
- [118]. Modeling of surface gap state passivation and Fermi level de-pinning in solar cells. Applied Physics Letters. 114. 1905.
- [119]. Modelling the enthalpy change and transition temperature dependence of the metal-insulator transi.... Physical Chemistry Chemical Physics. 22. 1905.
- [120]. Machine-Learning-Accelerated Catalytic Activity Predictions of Transition Metal Phthalocyanine Du.... Journal of Physical Chemistry Letters. 12. 1905.
- [121]. Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO. Physical Review Materials. 2. 1905.
- [122]. Calculation of TiO2 Surface and Subsurface Oxygen Vacancy by the Screened Exchange Functional. Journal of Physical Chemistry C. 119. 1905.
- [123]. Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony. Journal of Physical Chemistry C. 124. 1905.
- [124]. A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a s.... Nanoscale. 8. 1905.
- [125]. Efficient Transfer Doping of Carbon Nanotube Forests by MoO3. ACS Nano. 9. 1905.
- [126]. Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor a.... Journal of Applied Physics. 119. 1905.
- [127]. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer .... Advanced Functional Materials. 27. 1905.
- [128]. Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters. Solid-State Electronics. 183. 1905.
- [129]. Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors. Scientific Reports. 5. 1905.
- [130]. Oxide defects and reliability of high K/Ge and III-V based gate stacks. IEEE International Integrated Reliability Workshop Final Report. 2016-March. 1905.
- [131]. Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for powe.... Applied Surface Science. 527. 1905.
- [132]. Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Ba.... Journal of Physical Chemistry C. 124. 1905.
- [133]. Revealing the oxygen reduction reaction activity origin of single atoms supported on g-C3N4 monol.... Journal of Materials Chemistry A. 8. 1905.
- [134]. Theoretical Insights into the Mechanism of Selective Nitrate-to-Ammonia Electroreduction on Singl.... Advanced Functional Materials. 31. 1905.
- [135]. Schottky barrier heights and band alignments in transition metal dichalcogenides. Microelectronic Engineering. 147. 1905.
- [136]. Graphene-Organic Two-Dimensional Charge-Transfer Complexes: Intermolecular Electronic Transitions.... Journal of Physical Chemistry C. 122. 1905.
- [137]. Structural changes during the switching transition of chalcogenide selector devices. Applied Physics Letters. 115. 1905.
- [138]. Iron Selenide Microcapsules as Universal Conversion-Typed Anodes for Alkali Metal-Ion Batteries. Small. 17. 1905.
- [139]. Phase boundary engineering of metal-organic-framework-derived carbonaceous nickel selenides for s.... Nano Research. 13. 1905.
- [140]. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structure.... ACS Applied Materials and Interfaces. 7. 1905.
- [141]. Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfid.... Nanoscale. 12. 1905.
- [142]. Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interf.... Science Advances. 3. 1905.
- [143]. Controllable high-performance memristors based on 2D Fe2GeTe3 oxide for biological synapse imitat.... Nanotechnology. 32. 1905.
- [144]. Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge. Scientific Reports. 7. 1905.
- [145]. Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors. Applied Physics Letters. 116. 1905.
- [146]. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer .... Physical Review Materials. 1. 1905.
- [147]. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures. Applied Physics Letters. 108. 1905.
- [148]. Defect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor de.... Journal of Applied Physics. 117. 1905.
- [149]. Computational Screening Single-Atom Catalysts Supported on g-CN for N2Reduction: High Activity an.... ACS Sustainable Chemistry and Engineering. 8. 1905.
- [150]. Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces. Journal of Applied Physics. 129. 1905.
- [151]. Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides. Journal of Applied Physics. 120. 1905.
- [152]. Carbon nanotube forests as top electrode in electroacoustic resonators. Applied Physics Letters. 107. 1905.
- [153]. Electronic properties and tunability of the hexagonal SiGe alloys. Applied Physics Letters. 118. 1905.
- [154]. Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces. Applied Physics Letters. 116. 1905.
- [155]. Preferential S/Se occupation in an anisotropic ReS2(1-: X)Se2 x monolayer alloy. Nanoscale. 9. 1905.
- [156]. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memor.... Applied Physics Letters. 107. 1905.
- [157]. Epoxy oxidized diamond (111)-(2 × 1) surface for nitrogen-vacancy based quantum sensors. Carbon. 173. 1905.
- [158]. Extending the metal-induced gap state model of Schottky barriers. Journal of Vacuum Science and Technology B. 38. 1905.
- [159]. Band offsets and metal contacts in monolayer black phosphorus. Microelectronic Engineering. 178. 1905.
- [160]. Tellurium nanowire gate-all-around MOSFETs for Sub-5 nm applications. ACS Applied Materials and Interfaces. 13. 1905.
- [161]. Enhanced electrochemical oxygen evolution reaction activity on natural single-atom catalysts tran.... Catalysis Science and Technology. 10. 1905.
- [162]. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters. 110. 1905.
- [163]. Germanium substitution endowing Cr3+-doped zinc aluminate phosphors with bright and super-long ne.... Acta Materialia. 155. 1905.
- [164]. Ab InitioStudy of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions. ACS Applied Materials and Interfaces. 13. 1905.
- [165]. Atomic structure and electronic structure of disordered graphitic carbon nitride. Carbon. 147. 1905.
- [166]. Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs. Applied Physics Letters. 118. 1905.
- [167]. Synthesis and Stabilization of Colloidal Perovskite Nanocrystals by Multidentate Polymer Micelles. ACS Applied Materials and Interfaces. 9. 1905.
- [168]. A density-functional-theory-based and machine-learning-accelerated hybrid method for intricate sy.... Materials Reports: Energy. 1. 1905.
- [169]. High-Throughput Electronic Structures and Ferroelectric Interfaces of HfO2 by GGA+U(d,p) Calculat.... Physica Status Solidi - Rapid Research Letters. 15. 1905.
- [170]. Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application. Journal of Physical Chemistry Letters. 12. 1905.
- [171]. Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2. Applied Physics Letters. 112. 1905.
- [172]. Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors. Scientific Reports. 7. 1905.
- [173]. Defects and Passivation Mechanism of the Suboxide Layers at SiO/4H-SiC (0001) Interface: A First-.... IEEE Transactions on Electron Devices. 68. 1905.
- [174]. AlN-GeO2 based gate stack for improved reliability of Ge MOSFETs. Microelectronic Engineering. 147. 1905.
- [175]. Band alignment calculation of dielectric films on VO2. Microelectronic Engineering. 216. 1905.
- [176]. Gas adsorption investigation on sige monolayer: A first-principle calculation. Sensors (Switzerland). 20. 1905.
- [177]. Electronic structure of amorphous copper iodide: A p -type transparent semiconductor. Physical Review Materials. 4. 1905.
- [178]. An Atomically Thin Air-Stable Narrow-Gap Semiconductor Cr2S3 for Broadband Photodetection with Hi.... Advanced Electronic Materials. 7. 1905.
- [179]. Effect of Phase Transition on Optical Properties and Photovoltaic Performance in Cesium Lead Brom.... Journal of Physical Chemistry C. 123. 1905.
- [180]. The effects of screening length in the non-local screened-exchange functional. Journal of Physics Condensed Matter. 27. 1905.
- [181]. A New Opportunity for 2D van der Waals Heterostructures: Making Steep-Slope Transistors. Advanced Materials. 32. 1905.
- [182]. Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys. Physical Review Materials. 3. 1905.
- [183]. CMOS compatible electrode materials selection in oxide-based memory devices. Journal of Applied Physics. 120. 1905.
- [184]. Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces. Applied Physics Letters. 114. 1905.
- [185]. Adsorption and diffusion of alkali atoms on FeX2 (X = Se, S) surfaces for potassium-ion battery a.... Applied Surface Science. 536. 1905.
- [186]. Phase dependence of Schottky barrier heights for Ge-Sb-Te and related phase-change materials. Journal of Applied Physics. 127. 1905.
- [187]. Growth of high-density carbon nanotube forests on conductive TiSiN supports. Applied Physics Letters. 106. 1905.
- [188]. Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices. Nanoscale. 8. 1905.
- [189]. The metal-insulator phase change in vanadium dioxide and its applications. Journal of Applied Physics. 129. 1905.
- [190]. Ab initio calculations of materials selection of oxides for resistive random access memories. Microelectronic Engineering. 147. 1905.
- [191]. Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal.... Advanced Materials Technologies. 2. 1905.
- [192]. Theoretical investigation on graphene-supported single-atom catalysts for electrochemical CO2redu.... Catalysis Science and Technology. 10. 1905.
- [193]. Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at cont.... Applied Physics Letters. 106. 1905.
- [194]. Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst. ACS Sustainable Chemistry and Engineering. 9. 1905.
- [195]. Blowing Iron Chalcogenides into Two-Dimensional Flaky Hybrids with Superior Cyclability and Rate .... ACS Nano. 15. 1905.
- [196]. Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators. Journal of Physical Chemistry C. 123. 1905.
- [197]. Research of n-type arsenic doped diamond: Theoretical analysis of electronic and mechanical prope.... Diamond and Related Materials. 108. 1905.
- [198]. AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels. Journal of Applied Physics. 119. 1905.
- [199]. A Feasible Strategy for Identifying Single-Atom Catalysts Toward Electrochemical NO-to-NH3 Conver.... Small. 17. 1905.
- [200]. Dopant compensation in HfO2 and other high K oxides. Applied Physics Letters. 104. 1905.